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| Transys Electronics LIMITED SOT-23 Formed SMD Package BF821 BF823 SILICON EPITAXIAL TRANSISTORS P-N-P transistors Marking BF821 = 1W BF823 = 1Y PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector-emitter voltage (RBE = 2,7 kW ) Collector current (peak value) Total power dissipation up to Tamb = 25 C Junction temperature D.C. current gain -IC = 25 mA; -VCE = 20 V Feedback capacitance at f = 1 MHz * IC = 0; -VCE = 30 V Transition frequency at f = 35 MHz -IC = 10 mA; -VCE = 10 V -V CB0 -V CE0 -V CER -I CM Ptot Tj hFE Cre fT BF821 max. 300 max. -- max. 300 max. max. max. > < > BF823 250 V 250 V -V mA mW C 100 250 150 50 1,6 60 pF MHz BF821 BF823 RATINGS (at TA = 25C unless otherwise specified) Limiting values BF821 BF823 Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector-emitter voltage (RBE = 2,7 kW ) Emitter-base voltage (open collector) Collector current (d.c.) Collector current (peak value) Total power dissipation up to Tamb = 25 C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient CHARACTERISTICS Tj = 25 C unless otherwise specified Collector cut-off current IE = 0; -VCB = 200V Collector-emitter voltage RBE = 2,7 kW ; VCE = 250 V RBE = 2,7kW ; VCE = 200V; Tj = 150C Saturation voltage -IC = 30 mA; -lB = 5 mA D.C. current gain IC = 25 mA; -VCE = 20 V Transition frequency at f = 35 MHz -IC = 10 mA; --VCE = 10 V Feedback capacitance at f = 1 MHz IC = 0; -VCE = 30 V -V CB0 -V CE0 -V CER -V EB0 -IC -I CM Ptot Tstg Tj max. 300 max. -- max. 300 max. max. max. max. max. 5 50 100 250 V 250 V --V V mA mA mW C C 250 -55 to +150 150 Rth j-a = 500 KW / BF821 -I CB0 < 10 50 10 0,8 50 60 1,6 BF823 10 nA 50 nA 10 mA V -I CER < -I CER < -V CEsat < hFE fT Cre > > < MHz pF |
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